国家/地区 美国（6）
IPC部 C（6） B（4）
IPC大类 C01（6） C23（3） B82（2）
IPC小类 C01B（6）
IPC C01B032/188（6）
发明人
公开年 2021（5）
申请年 2020（6）
专利权人

Preparation of graphene involves growing graphene film on growth substrate, setting viscose layer on surface of graphene film, removing growth substrate and using water or cleaning organic solvent, and etching away from surface film.

FAN S, LI Q, JIN Y, ZHANG L, ZHANG T

Preparing gas selective separation filter involves providing graphene membrane on sacrificial support layer, subjecting graphene membrane to transient pressurized ozone gas pulse, purging ozone, and cooling down ozone treated graphene membrane.

AGRAWAL K V, HUANG S, HSU K, AGRAWAL K, HWANG S, HUSH K, XU G

Growing graphene selectively involves forming ion implantation region and ion non-implantation region in substrate by implanting ions locally into substrate and selectively growing graphene in ion implantation region.

LEE E, SHIN H, SHIN K, BYUN K, KIM C, LEE C, LEE C S, BYUN K E, SHIN K W, SHIN H J

Obtaining a silicon carbide (SiC)-graphene surface composite with controlled surface morphology for use in e.g., electronics by subjecting SiC substrate, after initial preparation, to annealing in beam of silicon atoms and cooling.

CIOCHON P, KOLODZIEJ J

Composition used in flexible near infrared photodetector, comprises nanowire.

IYER S, NALAMATI S R K, LI J

Production of electronic device such as integrated circuit board, involves providing substrate, supplying flow comprising precursor compound, selectively laser ablating graphene, and selectively laser ablating surface of substrate.

GLASS H, GUINEY I, TYLER M, WALLIS R, BAINES R, THOMAS S