国家/地区 中国（19） 美国（17） 世界知识产权组织（16） 欧洲专利局（EPO）（13） 日本（10） 韩国（10） 印度（4） 台湾（4） 加拿大（3） 澳大利亚（2） 新加坡（2）
IPC部 C（28） B（13） H（12）
D（2）
IPC大类 C01（28） H01（12） B82（10）
B01（4） C08（4） C09（4）
C23（3） D01（2） H05（2）
IPC小类 C01B（28） B82Y（8） H01B（7）
H01M（5） H01G（4） B01J（3）
B82B（3） C08G（3） C09D（3）
C23C（3） C08K（2） D01F（2）
H01L（2）
IPC C01B032/194（28）
发明人 BOHM S（2） CHEN Z（2） WANG X（2）
ZHANG L（2） ZHANG M（2）
公开年 2015（28）
申请年 2014（28）
专利权人 TATA STEEL U.（2）

Preparation of aqueous dispersion of electroconductive graphene or dispersed slurry for e.g. chemical sensor, involves non-covalently bonding ionic liquid to electroconductive graphene and hydrophilic modifying mixture.

CHEN J, LU X, WANG X

Multilayer graphene dispersion liquid for, e.g. display element, comprises multilayer graphene, polymer having hydrocarbon group and nonionic group and ketone-based organic solvent.

HIRAISHI A, MURAMATSU K

Equipment forautomatically transferring graphene monolayer used for transparent electrodes in e.g. display, has stirring element which homogenizes liquid mixture, and ramp which feeds homogenized liquid mixture in substrate.

ZURUTUZA ELORZA A, DE LA FUENTE COSIA J, ALONSO RODRIGUEZ B, PESQUERA RODRIGUEZ A, CENTENO PEREZ A

Manufacture of n-doped graphene used for manufacturing electrical components, involves exposing graphene to ammonium fluoride, leading to formation of fluorine layer on portion of surface of graphene layers.

BONG J H, CHO B J, SUL O, YOON H A, ALEXANDER Y H, SUL W J, CAO B, FENG Z, XUE W, CHO B, BONG J

Formation of graphene scroll for synthesizing graphene article, involves annealing catalyst substrate in hydrogen gas, exposing substrate to reaction gas mixture, detaching substrate from graphene and consolidating synthesized graphene.

VLASSIOUK I V, IVANOV I N, DATSKOS P G

Device for preparing graphene film, comprises tank body having accommodating space, where accommodating space comprises solution, feeding unit, graphene solution and transmission apparatus.

CHEN Z, LI L, ZHOU T, WU F

Repairing reduced graphene oxide comprises e.g. reacting graphene oxide with Lewis acid and methyl containing compound, refluxing, adding Lewis acid and repair agent, reacting, mixing with metal powder catalyst, reacting and annealing.

ZHANG M, ZHANG L

A graphene composition comprises graphene, acid, oxidizing agent and specific nitrogenous organic compound.

KWON Y D, KIM K S, KIM K, KWON Y

Manufacture of doped reduced graphene oxide involves dispersing graphene oxide in organic solvent, adding boron trifluoride etherate, alkyl thiol, aryl thiol, alkyl amine or arylamine to dispersed graphene oxide, and processing.

LEE H

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y