国家/地区 中国（17）
IPC部 C（17）
IPC大类 C01（17）
IPC小类 C01B（17） C23C（17） B22F（3）
B32B（3） C22C（3） B82Y（2）
C09K（2） C30B（2）
IPC C01B032/194（17）
发明人 DUAN Y（3） SHAO L（3） SHI H（3）
HUANG D（2） LI J（2） LI M（2）
LI X（2） LI Y（2） LI Z（2）
ZHANG Y（2）
公开年 2022（17）
申请年 2021（10）  2022（7） 
专利权人 CHINESE ACAD.（3） CHONGQING GR.（3）

Scale production device of high conductive graphene metal composite material, has sealing chamber that is provided with feeding area and high temperature area provided with heating mechanism, pressing mechanism and transport mechanism.

SHAO L, DUAN Y, SHI H, LI Z, ZHANG Y

Preparing graphene copper composite material useful in supercapacitors and motor drive devices, comprises e.g. pre-setting multi-layer copper foil in hot pressing chamber, adopting chemical vapor deposition, preparing graphene film on copper foil surface, and sintering graphene-copper.

GONG M, ZHAO M, LI M, CHEN C, CHEN Q, YANG W, LI Y, WANG Y, LIU B, PEI Z, ZHANG X, LIANG J

Transferring two-dimensional material by using higher fatty alcohol or higher fatty acid, comprises e.g. spin-coating to obtain higher fatty alcohol or fatty acid/two-dimensional material/substrate complex and obtaining higher aliphatic alcohol or fatty acid/two-dimensional material complex.

CHENG H, XU C, ZHOU T, REN W

Nickel coated graphene used in e.g. electronics, comprises graphene, nickel salt, complexing agent, carboxy compound, reducing agent, stabilizer, and accelerant.

JU S

Growth forging split device for graphene metal composite material, comprises growth chamber, forging chamber and transfer mechanism for transferring metal material, where growth chamber and forging chamber are inside with heating system.

SHAO L, HUANG D, DUAN Y, JIANG H, MA J, XU X, SHI H, LI X, YU J

Preparation device of metal layered graphene on solid carbon source, has heat compression chamber that is provided with auxiliary gas path mechanism introducing auxiliary gas into sample chamber, growth chamber and compression chamber.

SHAO L, LI X, ZHANG Y, LI Z, HUANG D, SHI H, DUAN Y

Preparation of graphene/molybdenum disulfide heterojunction semiconductor film comprises cleaning copper foil substrate and silicon dioxide/silicon substrate, growing molybdenum-disulfide film and depositing graphene thin membrane.

ZHANG L

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Preparation method of graphene-coated metal particles used in industry, involves filtering metal particles with uniform particles filter and performing corona treatment on the surface of the metal particles, and then uniformly mixing corona treated metal particles surface with graphene powder.

LI A, LI J

Heat-conducting graphene sheet filling hole copper-covering structure for use in electronic radiating field, has heat conducting graphene sheet whose upper and lower surfaces are uniformly coated with copper layer.

LIU Y, HUANG K, QIN F, WEI T