国家/地区 美国（12）
IPC部 C（12）
IPC大类 C23（12）
IPC小类 C23C（12） C01B（9） H01B（6）
H01L（5） B32B（2） C25D（2）
IPC C23C016/06（12）
发明人 LIPOMI D J（2） SHIN H（2） ZARETSKI A（2）
公开年 2014（4） 2015（3） 2016（3）
申请年 2015（4）  2013（3）  2016（2） 
专利权人 KOREA ADVANC.（2） SAMSUNG ELEC.（2） UNIV CALIFOR.（2） UNIV SUNGKYU.（2）

Anode active material comprises carbon material, and silicon structure attached to carbon material, where silicon structure includes silicon nanoparticle, metal thin film formed on surface of silicon nanoparticle, and graphene coated on surface of metal thin film.

KIM Y H, SON M W, KIM Y, SUN M

Production of integrated layer of highly oriented halogenated graphene sheets or molecules used as dielectric material component for microelectronic devices involves preparing graphene oxide dispersion or gel having graphene oxide sheets.

ZHAMU A, JANG B Z, ZHAMUARUNA

Manufacturing method of graphene layer on substrate, involves exfoliating metalized graphene layer from first substrate and laminating metalized graphene layer to second substrate.

ZARETSKI A, LIPOMI D J

Tailoring amount of graphene used in electrically conductive structures, comprises arranging substrate material in many strands and arranging at least one graphene layer coated circumferentially by at least one of the strand.

SCHMIDT W R, DARDONA S

Production method of stacked electrode, involves removing solvent from applied dispersion liquid of metal nanowires to prepare metal wiring on multi-layered graphene film.

NAITO K, TSUTSUMI E, YOSHINAGA N, AKASAKA Y

Method of manufacturing graphene layer on substrate, involves laminating metalized graphene layer to second substrate.

LIPOMI D J, ZARETSKI A, LIPOMI D

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Board for forming graphene layer, comprises board layer; metal catalyst layer disposed on the board layer and functioning as a catalyst for forming the graphene layer; and stress reduction layer to reduce stress of the metal catalyst layer.

CHO B J, MUN J H