国家/地区 中国（9）
IPC部 C（9）
IPC大类 C23（9）
IPC小类 C23C（9） C25D（2） G21H（2）
IPC C23C016/26（9）
发明人 WANG L（9）
公开年 2020（3） 2016（2） 2022（2）
申请年 2019（2）  2021（2） 
专利权人 CHINA NUCLEA.（2） NINGBO INST .（2） UNIV NANCHAN.（2）

Preparation of graphene-encapsulated ultra-thin nickel-63 radiation source film used in preparation of Schottky junction stacked radiation cell, involves preparing nickel chloride film, and putting graphene/nickel chloride/graphene film in vacuum environment for reduction treatment.

WANG X, WANG L, CHEN Z, YANG Y, ZHANG J, SU C, FENG H, LI P, WU W, LUO T, ZHOU C

Preparing ultra-thin nickel radiation source useful to prepare Schottky junction type laminated beta-radiation cell, involves dripping nickel source on surface polymethyl methacrylate/graphene film and arranging nickel nano particles in oriented mode along direction of magnetic line.

WANG X, WANG L, SU C, FENG H, CHEN Z, ZHANG J, LI P, WU W, YANG Y, ZHOU C

Preparing wafer level, high quality boron nitride/graphene heterojunction film, involves cutting metal bag, and transferring metal bag to target substrate surface to obtain hexagonal boron nitride/graphene vertical hetero-junction film.

HU P, YANG H, TAN B, ZHANG S, SU Z, LIU D, WANG L

In-situ preparing copper-based fluorinated graphene corrosion-resistant film involves e.g. taking copper substrate in reaction chamber, introducing carbon source-, hydrogen- and fluorine gases and in-situ fluorination etching treatment.

ZHAO W, WU Y, WANG L, LIU C, FANG Z, XUE Q

Metal bipolar plate comprises metal substrate, and copper nano layer which is deposited on metal substrate, graphene layer is prepared on copper nanolayer er.

SHANGGUAN P, WANG H, WANG L

Repairing defect of chemical vapor deposition (CVD) graphene film involves providing CVD graphene film, where CVD graphene film is placed in liquid phase reaction system, and repairing substance is added to liquid phase reaction system.

ZHAO W, WU Y, ZHU X, SHEN L, ZENG Z, WANG L, XUE Q

Manufacture of carbon nanotube array-graphene hybrid structure involves cleaning silicon wafers, placing in quartz tube of furnace, placing mixed solution of ferrocene and xylene, supplying carbon source and catalyst, and heating.

WANG L, GUO S, FAN D

Prevention of deposition of reactants and by-products in metal-organic chemical vapor deposition reaction chamber by electrochemically polishing component part, depositing catalytic reaction layer, protecting and depositing graphene layer.

FANG C, JIN K, LIU X, WANG L, YANG C, ZHANG L, ZHANG Y

Polycrystalline graphene film useful as a flexible transparent conductive film in the organic electroluminescence display, electromechanical storage, organic solar battery and photoelectric functional device.

WANG L, ZHANG X, DU X