国家/地区 台湾（5）
IPC部 C（5）
IPC大类 C23（5）
IPC小类 C23C（5） C01B（4） B82Y（3）
B32B（2）
IPC C23C016/26（5）
发明人 CHIU P（2） CHIU P W（2）
公开年 2013（5）
申请年 2012（5）
专利权人 CHIU P（2）

Growing graphene by chemical vapor deposition used in electronics involves disposing metals and dielectric substrates in reactor, where gap is formed between them/introducing and heating reaction gases/depositing graphene films on substrate.

TENG P, LIN Y, CHIU P, TENG P Y, LIN Y C, CHIU P W

Manufacturing electrical conductor, comprises providing substrate layer, depositing surface layer on substrate layer, and depositing graphene layer on substrate layer.

SULLIVAN M M E, HILTY R D, MARTENS R I, ZHENG M, HEMOND J H B, LIU Z, SULLIVAN MALERVY M E, SULLIVAN MALERVY M, HILTY R, MARTENS R, HEMOND J, SULLIVANMALERVY M E

Method for forming e.g. multi-layered graphene layer deposited on glass substrate, involves utilizing microwave with electron cyclotron resonance mechanism to excite carbon-containing gas to deposit graphene layer on substrate.

HUANG K, CHANG C, HSIEH Y, CHIU P, MEDINA H, QIU B, XIE Y, ZHANG Z, MEDIONA H, HUANG K P, CHANG C C, HSIEH Y T, CHIU P W

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T

Copper foil for manufacturing graphene, has specified arithmetic mean roughness in rolling parallel direction and rolling perpendicular direction.

CHIBA YOSHIHIRO, CHIBA Y, CHIBA G, YOSHIHIRO C