国家/地区 中国（5）
IPC部 C（5）
IPC大类 C23（5） C01（2）
IPC小类 C23C（5） C01B（2）
IPC C23C016/26（5）
发明人 GAO X（2） GU W（2） LIU B（2）
ZHENG K（2）
公开年 2021（3） 2020（2）
申请年 2020（5）
专利权人 BEIJING GRAP.（2）

Chemical vapor deposition device for preparing graphene film, has vacuum monitoring unit for controlling and detecting vacuum degree of reaction unit, and carbon source feeding unit comprising atomizer and vaporizer.

GAO X, SHAN J, LIU B, ZHENG K, GU W

Chemical vapor deposition device for realizing continuous growth of graphene film on surface of graphene glass, comprises reaction unit for generating thin film on substrate by chemical vapor deposition reaction, and bearing panel.

GAO X, ZHENG K, LIU B, GU W

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Growing vertical graphene film comprises preparing substrate and depositing graphene film on substrate by hot filament chemical vapor deposition (CVD) method.

LI M, YANG Z, LI H, LI C, YANG B

Preventing laser gyro gas leakage by performing magnetron sputtering plating copper or nickel, adopting chemical vapor deposition method to grow graphene, and adopting vacuum shield method to detect helium leakage rate.

WANG F, LU G