国家/地区 中国（5） 韩国（3） 日本（2） 美国（2）
IPC部 C（7） B（3）
IPC大类 C23（7）
IPC小类 C23C（7） B82Y（2） C01B（2）
IPC C23C016/448（7）
发明人 GAO X（2） GU W（2） LIU B（2）
ZHENG K（2）
公开年 2021（7）
申请年 2019（3）  2020（3） 
专利权人 BEIJING GRAP.（2）

Chemical vapor deposition device for preparing graphene film, has vacuum monitoring unit for controlling and detecting vacuum degree of reaction unit, and carbon source feeding unit comprising atomizer and vaporizer.

GAO X, SHAN J, LIU B, ZHENG K, GU W

Chemical vapor deposition device for realizing continuous growth of graphene film on surface of graphene glass, comprises reaction unit for generating thin film on substrate by chemical vapor deposition reaction, and bearing panel.

GAO X, ZHENG K, LIU B, GU W

Method for production of atomic bilayer nanotape, involves oxidizing portion of monolayer to provide oxidized portion, and removing oxidized portion to provide atomic layer nanotape comprising transition metal dichalcogenide material.

HARUTYUNYAN A R, LI X

Forming silicon carbide coating layer by chemical vapor reaction process, comprises placing metallic silicon powder on bottom of chamber, positioning carbon-containing material, and raising and maintaining temperature inside chamber.

LIMKWANGHYUN, SHIN I C, LIM B J, CHO N C, PARK J G, LEE H, LEE J

Graphene coated metallic material product includes metal products with graphene coat covering the surface along the outer shape of the metal product, where graphene coat is formed by thermal chemical vapor deposition method.

HWANG C C, CHUNG D S, OH D

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Preparing graphene/metal composite powder involves heating carbon-containing free radicals obtained by hot filament cracking to react with metal powder in a fluidized bed, lowering temperature to grow graphene on the fluidized metal powder.

DAI D, YANG K, LIN Z, JIANG N, MA H