国家/地区 美国（6） 欧洲专利局（EPO）（4） 韩国（4） 世界知识产权组织（4） 中国（2） 日本（2）
IPC部 C（6）
IPC大类 C23（6） C01（5） H01（2）
IPC小类 C23C（6） C01B（5） H01L（2）
IPC C23C016/455（6）
发明人
公开年 2015（6）
申请年 2015（4）  2014（2） 
专利权人

Method of manufacturing graphene layer on substrate, involves laminating metalized graphene layer to second substrate.

LIPOMI D J, ZARETSKI A, LIPOMI D

Layer stack used to grow graphene or carbon nanotubes that are used e.g. to make integrated circuit or printed circuit board interconnect, comprises substrate, protective layer, and attachment surface disposed between substrate and layer.

SILVA S R, AHMAD M

Processing method for making graphene spin filter device by chemical vapor deposition (CVD) involves growing graphene film on first crystalline ferromagnetic metal surface and then depositing second ferromagnetic film on graphene film.

COBAS E, FRIEDMAN A L, JONKER B T, VAN T ERVE O M T

Apparatus for separating carbon-containing structures in form of nanotubes or graphene, has plate-shaped component that is arranged in process chamber housing and inserted in retaining recess formed in wall of process chamber housing.

RIPPINGTON D E, JOUVRAY A, RUPESINGHE N L, TEO K, TEO K B K, RUPESINGHE N

Forming graphene film comprises placing substrate and carbon source into reaction chamber having gas inlet, and heating carbon source under flow of hydrocarbon-free gas to convert portion of carbon source into graphene film on the substrate.

DIJON J, TYURNINA A

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H