国家/地区 中国（5） 美国（3） 世界知识产权组织（3）
IPC部 C（7）
IPC大类 C23（7）
IPC小类 C23C（7） C01B（2）
IPC C23C016/26（7）
发明人 ZHANG X（2）
公开年 2014（7）
申请年 2013（3）  2014（3） 
专利权人

Large-surface-area single-crystal monolayer graphene material for e.g. transparent electrode, has graphene layer arranged on flat board or catalytic layer, where catalytic layer is arranged on crystal plane that is arranged on substrate.

PARK H B, KIM H, YOON H W, PARK S M, LEE M Y, HO B P, HEE W Y, SUN M P, YONG L M, LEE M, PARK H, PARK S, YOON H

Silicon carbide graphene thin film manufacturing method, involves injecting carbon source gas into vacuum chamber through hydrogen injecting vacuum cavity, maintaining flow rate of hydrogen, and measuring heat preservation and cooling speed.

CHEN Z, WANG Y

Preparing carbon nanotube-graphene composite, comprises inserting carbon nanotube chemical vapor deposition catalyst between stacked graphene sheets, heating nanotube chemical vapor deposition catalyst, growing and cooling carbon nanotubes.

HE P

Manufacture of transparent antenna comprises preparing antenna substrate with not less than predetermined antenna transparency, growing graphene film, laser engraving and forming antenna pattern.

XIE S, WANG C, ZHOU Z

Preparation of graphene crystal domain involves forming copper-nickel double sided substrate, introducing hydrogen, reacting, introducing carbon source, growing graphene crystal domain, introducing argon gas and cooling.

YANG C, WU T, LU G, ZHANG X

Forming graphene film on one or more surfaces of metal substrate involves heating metal substrate defining one or more surfaces to exposure temperature, and restricting metal flux from one or more surfaces at the exposure temperature.

VAN BAARLE D, VAN RIJN R

Preparing graphene thin layer on the surface of metal catalyst involves reacting carbon source and metal catalyst substrate in presence of hydrogen and argon so as to perform carburization reaction.

GAO S, GENG X, GONG Y, LIU L, LONG M, ZHANG X, ZHU C