国家/地区 美国（5） 中国（3） 欧洲专利局（EPO）（3） 韩国（3） 世界知识产权组织（3） 日本（2）
IPC部 B（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C30B001/10（6）
发明人
公开年
申请年
专利权人

Method for preparing micro-nano materials comprise e.g. introducing sacrificial carrier into slurry containing raw materials and auxiliary agents, shaping and drying to form mixture, synthesizing preform to prepare porous body made of micro-nano materials, and performing dispersion operation.

LI Q

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Method for manufacturing single-crystal graphene sheet, involves heat treating catalyst layer and carbonaceous material in one of inert atmosphere and reducing atmosphere to form single-crystal graphene sheet.

CHOI J, SHIN H, YOON S, HAN J

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Making graphene on diamond substrate, comprises applying metal layer to crystallographic face of diamond substrate, and heating diamond substrate under vacuum to convert portion of diamond substrate at crystallographic face into graphene.

SUNG C, SONG J

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C