国家/地区 中国（7）
IPC部 C（7）
IPC大类 C01（7） C30（7） H01（6）
B82（4） C23（4）
IPC小类 C01B（7）
IPC C30B029/02（7）
发明人 VEERASAMY V（3） VEERASAMY V S（3）
公开年 2011（3）
申请年 2009（2） 
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3）

Device for converting carbon pill into graphene used for producing turbostratic graphene, comprises space between electrically conductive surfaces to support carbon pill in space, electrodes coupled to conductive surfaces and power supply.

MANCEVSKI V, VLADIMIR M

Synthesis of graphene derivatives and functional materials used in e.g. transistors, sensors, actuators, pharmaceutical, information displays and semiconductor comprises forming refluxed solution of starting material and additive.

TANIMOLA O W

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Manufacture of graphene thin film used in metal oxides window electrodes for solid-state solar cells involves disposing catalyst thin film on back support substrate, introducing hydrocarbon, and heating to promote graphene growth.

VEERASAMY V S, VEERASAMY V

Electronic device for field effect transistor, comprises body including single crystal region that has hexagonal crystal lattice substantially lattice-matched to graphene, and epitaxial layer of graphene disposed on the region.

PFEIFFER L N, PFEIFFER L