国家/地区 美国（6）
IPC部 C（6）
IPC大类 C30（6） C01（5） B82（4）
H01（4） C23（2）
IPC小类 C30B（6）
IPC C30B029/02（6）
发明人
公开年 2013（6）
申请年 2012（4）  2013（2） 
专利权人

Producing two-dimensional nanomaterial (graphene) by chemical vapor deposition, used in e.g. display, comprises contacting substrate with flow of hydrogen and flow of precursor such that precursor forms material on surface of substrate.

GROBERT N, MURDOCK A T, KOOS A A

Formation of graphene film on surface of substrate for, e.g. lasers, involves locating carbon source at substrate surface, controlling ambient conditions to inhibit nucleation, and then initiating graphene nucleation at localized site.

DONG G

Method for forming composition of matter to control macroscopically continuous single and multiple layer graphene films, involves forming layers of graphene on metal oxide opposite major surface of metal by carbon molecular beam epitaxy.

KELBER J, KELBER J A

Preparing a semiconductor substrate, useful for forming a multilayer article, comprises forming a metal film on the substrate, contacting metal film surface with a carbon-containing gas and precipitating carbon atoms to form graphene layer.

SEACRIST M R, BERRY V

Production of graphene involves supplying carbon to heated transition metal surface, and forming graphene on buffer thin-film epitaxially grown on nickel substrate.

FUJII T, SATO M

Growing patterned single-crystalline graphene comprises depositing a graphene growth barrier that defines a pattern on a substrate surface, and growing graphene on the substrate surface, around the graphene growth barrier.

ARNOLD M S, GOPALAN P, SAFRON N S, KIM M