国家/地区 美国（4） 韩国（3） 中国（2）
IPC部 H（5） B（2） C（2）
IPC大类 H01（5） C23（2）
IPC小类 H01J（5） H01L（5） C23C（2）
IPC H01J037/32（5）
发明人 CHOI S M（2） CUI S（2） JANG D Y（2）
JEON M（2） JEON M S（2） JIN R（2）
JUNMINSUNG（2） KIM Y S（2） MIN C S（2）
ZHANG D（2）
公开年 2023（5）
申请年 2022（5）
专利权人 SEMES CO LTD（2）

Direct-current plasma system for processing of substrate, includes direct-current plasma reaction chamber configured to contain direct-current plasma that is generated between anode and cathode of the direct-current plasma reaction chamber.

GODDARD W A, MARGOLESE D I, ANZ S J, SANDO S F

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Chuck assembly used in semiconductor device fabrication system, comprises chuck base includes lower base and upper base that is on lower base, ceramic plate on upper base, and isolator ring enclosing outer sidewall of lower base.

JUNG U, SHIN M, SUNG D, NA D, KIM D, KIM K, JEONG S, JUNG S H, KIMKYUNGSUN, KIM D W, SUNG D Y, SU S M, JUNGUNGYO

Substrate treating apparatus for treating substrate using plasma, has chamber having treating space, support unit positioned within treating space and configured to support substrate, and plasma generation unit configured to generate plasma from process gas supplied to the treating space.

JANG D Y, CHOI S M, KIM Y S, JEON M S, JUNMINSUNG, MIN C S, ZHANG D, CUI S, JIN R, JEON M

Substrate treating apparatus, has plasma generation unit comprising bottom electrode and top electrode opposite bottom electrode, where top electrode comprises plate and electrode layer on plate.

JIN Y J, KIM J H, JANG D Y, CHOI S M, KIM Y S, JEON M S, JUNMINSUNG, MIN C S, YOUNGJO J, JIN Y, KIM J, ZHANG D, CUI S, JIN R, JEON M