国家/地区 日本（5） 中国（2）
IPC部 C（7）
IPC大类 H01（7） C01（5） C07（4）
B82（2） C08（2）
IPC小类 H01L（7） C01B（5） B82Y（2）
C07C（2） C07D（2） C08G（2）
IPC H01L051/30（7）
发明人 KONDO O（2）
公开年 2022（7）
申请年 2021（4）  2020（2） 
专利权人 FUJITSU LTD（4）

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

New raphene nano-segment molecule containing azulene unit-azulene and rubicene compound i.e. azuleno(5,6,7,8,1-uvwxa)cyclohepta(ijkl)rubicene compound useful in near-infrared absorption photodetection, and field-effect transistors, organic solar cells, organic light-emitting diodes.

LI C, ZHANG G, ZHANG X, QIN L, ZHANG D

Optical element comprises substrate, multilayer graphene provided on substrate, electrode connected to multilayer graphene, and another electrode connected to multilayer graphene.

KONDO O

New carbazole derived electro-crosslinkable n-type organic semiconductor for use in electronic device, such as organic thin film transistors, organic solar cells, organic photosensitive diodes, organic photosensitive transistors, organic light emitting diodes, and quantum well diodes.

HUANG F, YANG X, YU G, ZHONG Z

Precursor used for forming graphene nanoribbon for electronic device, comprises 10-heptacyclo triaconta-tetradecaenyl heptacyclo triaconta-pentadecaene compound.

YAMAGUCHI J

Graphene nanoribbon used as channel for e.g. semiconductor device, is 2,12-bis(anthracen-9-yl)-6,16-dithiapentacycloicosa-1,3,5(9),7,10,12,14,17,19-nonaene-based compound or 2,12-bis(anthracen-9-yl)-6,18-dithiapentacycloicosa-1,3,5(9),7,10,12,14,16,19-nonaene-based compound.

OTOMO M, SATO S, HAYASHI H, YAMADA Y

Semiconductor device, such as ffield effect transistors (FET), comprises gate electrode arranged on graphene film between source electrode and drain electrode with gate insulator film interposed between gate electrode and graphene film.

MITSUHASHI F, TATENO Y