国家/地区 韩国（11） 美国（11） 中国（5） 欧洲专利局（EPO）（4） 日本（3） 世界知识产权组织（3）
IPC部 B（11）
IPC大类 B01（11）
IPC小类 B01J（11）
IPC C01B031/02（8） C01B031/04（6） B01J021/18（5）
B82Y030/00（5） B82Y040/00（5） B32B009/00（4）
B01J019/08（3） C23C016/26（3） H01L021/02（3）
B01J023/755（2） B01J037/02（2） B01J037/08（2）
B05D003/02（2） B05D003/06（2） C01B032/186（2）
发明人 SHIN H（11）
公开年 2009（4） 2012（2） 2014（2）
申请年 2008（4）  2011（2）  2013（2） 
专利权人 SAMSUNG ELEC.（10） SHIN H（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Catalyst used for producing hydrogen peroxide, comprises carbon-based support, and catalytic moiety containing metal-nitrogen bonding structure, and bonded to carbon-based support.

HYEON T, SUNG Y, SHIN H, LEE B, JUNG E, SHIN H J, LEE B H, CHUNG E Y, LI B

Making graphene structure involves depositing metal layer over silicon carbide substrate, and performing first heat treatment on substrate over which metal layer is deposited to form composite layer and electrically neutral graphene layer.

AHN J, SHIN H, SONG I, AHN J R, SHIN H C, SONG I K

Fabricating single-layer graphene on silicon carbide wafer used as channels of field-effect transistor array, comprises disposing graphene layers on carbon buffer layer of wafer, and converting buffer layer to single-layer graphene.

WOO Y, YOON S, SHIN H, LEE D, CHOI J, WOO Y S, YOON S M, SHIN H J, LEE D W, CHOI J Y

Making crystalline graphene, used e.g. in electronic device, comprises e.g. performing first thermal treatment by supplying heat to inorganic substrate, and introducing vapor carbon supply source into reactor during first thermal treatment.

SHIN H, CHOI J, WOO Y, YOON S, SHIN H J, CHOI J Y, WOO Y S, YOON S M

Controlling number of graphene layers to form mono/bilayer graphene, used e.g. in sensor, comprises forming graphene on first surface of first substrate, forming second substrate on second surface of first substrate and irradiating graphene.

SHIN H, CHOI J, HAN G, LEE Y, CHOI J Y, HAN G H, LEE Y H, SHIN H J

Forming graphene nano ribbon used in display device involves depositing graphene sheet on surface of substrate, forming plasma mask with nano pattern on sheet, and forming nano pattern in sheet by plasma treating stack structure having mask.

SHIN H, CHOI J, LEE Y, HAN G, CHOI J Y, HAN G H, LEE Y H, SHIN H J

Preparing graphene shell comprises performing first heat treatment on a mixture of organic solvent and graphitization catalyst to carburize the catalyst, and forming the shells on surfaces of carburized catalyst by second heat treatment.

CHOI J, SHIN H, YOON S, IN Z, CHOI J Y, SHIN H J, YOON S M

Preparing graphene sheet, useful in e.g. electrical device, comprises forming film comprising graphitizing catalyst, heat-treating gaseous carbon source in presence of the catalyst to form graphene, and cooling graphene to form sheet.

CHOI J, SHIN H, YOON S, CHOI J Y, SHIN H J, YOON S M, IN Z

Graphene sheet preparation e.g. for hydrogen storage medium, comprises disposing polymer on sheet form graphitizing catalyst, and heat-treating polymer on graphitizing catalyst in inert or reductive atmosphere.

CHOI J, SHIN H, YOON S, CHOI J Y, SHIN H J, YOON S M, YEONG C J, JIN S H, MI Y S