国家/地区 韩国（92）
IPC部 B（92）
IPC大类 C01（92）
IPC小类 C01B（92）
IPC C01B031/04（64） C01B031/02（48） B82B003/00（25）
B82Y040/00（25） C01B032/182（21） B82Y030/00（17）
B82B001/00（13） C01B032/194（12） H01B001/04（11）
C01B032/15（10） C01B032/18（10） C01B032/184（10）
C01B032/186（9） C23C016/26（9） H01M004/587（7）
发明人 LEE J（5） KIM H（4） LEE K S（4）
CHOI J（3） JEON S（3） KIM K（3）
KIM K S（3） PARK H（3） PARK S（3）
SCHWAB M G（3） SEUL Y L（3） SOO J P（3）
BONG H（2） CHIO S（2） CHIU G（2）
公开年 2015（57） 2014（25） 2016（10）
申请年 2014（92）
专利权人 KOREA ADVANC.（6） SAMSUNG ELEC.（5） UNIV SUNGKYU.（5） HANWHA AEROS.（4）
HANWHA TECHW.（4） INHA IND PAR.（4） UNIV YONSEI .（4） BASF SE（3）
UNIV SEOUL N.（3） BOEING CO（2） CENT ADVANCE.（2） CORNING PREC.（2）
COUNCIL SCI .（2） DONG JIN SEM.（2） ELECTRONICS .（2） HANWHA CHEM .（2）
KOREA ELECTR.（2） KOREA RES IN.（2） LG CHEM CO L.（2） LG CHEM LTD（2）

Manufacture of secondary battery cathode material involves preparing silicon colloidal solution using waste silicon sludge suspension, preparing mixture of silicon agglomerates, graphene oxide and dispersion medium, and heat-treating.

JANG H D, CHANG H, KIM H, ZHANG X, JIN H

Manufacturing method of CNT-graphene composite material, involves injecting hydrocarbon gas into furnace, and growing carbon nanotube on catalyst metal adhered to furnace inner wall.

PARK C K

Manufacture of highly dispersible reduced graphene oxide based metal nanoparticle dispersion, involves preparing mixture comprising graphene oxide, metal nanoparticle precursor, and saccharides, and plasma processing mixture.

CHOI H S, KIM S H

Residue free transfer method of graphene/metal sample pasted by limited polymer line, transferring graphene, coating polymer coating material in metal flake, hardening of metal flake, etching metal foil and rinsing with distilled water.

HWANG C Y, YOO K J

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S

Gene amplifying and detecting device comprises a gene amplifying chip including a chamber formed in it, a reaction solution filled in the chamber and including a fluorescent material, a light source, a light detector, and graphene heaters.

CHUNG K H, KIM J T, CHOI Y H, CHOI C G, CHOI H K, YU Y J, YOUN D H, CHOI J S

Manufacturing graphene nanocomposite structure useful in e.g. biosensor, comprises preparing seed solution to grow nanowire on substrate coated with graphene and immersing graphene by flowing in precursor material for growing nanostructures.

HEE K S, HYUNG K K, MYEONG S D, WON H S, YOON H H

Tunneling diode used for diode-based optoelectronic device, consists of silicon quantum dot layer formed on silicon oxide thin film, doped layer having structure having graphene-silicon quantum dot hybrid structure, and electrode.

CHOI S H, SHIN D H, KIM S, SUK H C, DONG H S, SUNG K, CHIO S, SHIN D, JIN C

Producing graphene-powder composite useful for improving and replacing materials in fuel cell and secondary battery, comprises injecting graphene lumps and powder into a container, and applying energy by stirring at a predetermined rate.

DONGHYUN B, JAEHYUCK S, JIYEON S, SEEUN S

Manufacture of porous graphene element involves decomposing substitution source while depositing carbon monoatomic layer on substrate arranged inside deposition furnace.

HEE Y K, HYEON K G, KIM H, KWON G