国家/地区 韩国（5） 世界知识产权组织（5） 中国（3） 美国（3）
IPC部 B（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B031/04（7） C23C016/26（5） C01B031/02（3）
C23C016/02（3） B82B003/00（2） C01B032/186（2）
C23C016/18（2）
发明人 JEONG S（2） LEE J（2） PARK I K（2）
PARK J H（2） PARK S（2） ROH Y（2）
YEON S（2）
公开年 2014（7）
申请年 2014（7）
专利权人 UNIV SUNGKYU.（2）

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Graphene pattern formation method involves forming DNA pattern, and forming graphene pattern on DNA pattern.

JEONG S, LEE J, PARK I K, PARK J H, PARK S, ROH Y, YEON S

Patterning a graphene in the manufacturing of semiconductor chip, by forming a DNA pattern and forming graphene on pattern, where pattern is formed by forming metal ion pattern on a substrate and adsorbing a DNA structure on ion pattern.

JEONG S, LEE J, PARK I K, PARK J H, PARK S, ROH Y, YEON S

Apparatus for manufacturing graphene comprises a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source, and a feeder for continuously supplying a catalyst metal.

MOON J, CHOI M, JUNG M

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y

Preparing graphene structure of 1-5 layers or controlling number of layers, involves introducing common substrate or substrate with powdered metal or substrate with definite pattern of metal inside reactor for chemical vapor deposition.

BERTRAN SERRA E, FREIRE SOLER V M, RAMIREZ SANCHEZ A, PASCUAL MIRALLES E, ANDUJAR BELLA J L

Method of preparing graphene layers on metallic substrate for e.g. paint, involves annealing metallic substrate at initial temperature, cooling for graphene growth and contacting carbon vapor with substrate at final temperature.

YIN Z, DU Z, ZHANG H, ZHU M