国家/地区 美国（7） 韩国（5） 世界知识产权组织（4） 中国（3） 欧洲专利局（EPO）（2） 日本（2）
IPC部 B（10）
IPC大类 C01（10）
IPC小类 C01B（10）
IPC C01B031/04（8） C23C016/26（5） C01B031/02（4）
B82Y030/00（3） B82Y040/00（3） B32B009/00（2）
C01B032/15（2） C01B032/18（2） C01B032/182（2）
H01L021/02（2） H01L029/16（2）
发明人
公开年 2015（10）
申请年 2015（10）
专利权人 UNIV SUNGKYU.（2）

Preparation of nanowire and graphene composite material by providing silicon germanium-on-insulator substrate comprising silicon substrate, oxide layer and silicon germanium layer from bottom to top, and etching silicon germanium layer.

DI Z, XUE Z, ZHANG M, YE L, DAI J, WANG Z

Manufacturing graphene film involves providing substrate, distributing graphene slurry on substrate, causing graphene slurry to distribute on substrate, and treating graphene slurry with atmosphere pressure plasma jet.

CHENG I, CHEN J, HSU C, CHOU P, LIU H, CHANG H, LIANG S, WU T, CHENG I C, CHEN J Z, HSU C C, CHOU P T, LIU H W, LIANG S P, WU T J

Method for forming workpiece of e.g. electronic device, involves removing layer of material on top of graphene surface in predetermined pattern, and releasing graphene from catalytic film such that graphene is in form of patterned layer.

JOHNSON A T, GUDIBANDE R R, QI Z J, JOHNSON A, GUDIBANDE R, QI Z

Manufacture of metal-containing graphene hybrid composite for forming electrode, involves mixing acid solution, metal salt containing metal ions and oxidized graphene, reducing resultant mixture and supporting reduced product.

LEE H, YOON Y

Preparing free or transferrable graphene sheet used in sensors to detect nitrogen dioxide, comprises pre-treating polycrystalline copper substrate with hydrogen-containing plasma, depositing graphene onto substrate, and decoupling graphene.

KUMAR S, OSTRIKOV K, VAN DER LAAN T A

Method for forming patterned graphene layer on substrate of electronic device, involves removing patterned structure to produce patterned graphene layer on substrate, where patterned graphene layer on substrate provides carrier mobility.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K

Manufacture of graphene involves irradiating near-infrared ray to chamber containing metallic catalyst and carbon source, reacting metallic catalyst and carbon source, and growing graphene on surface of metallic catalyst.

HONG B H, HAN J H, HAN D H, CHOI W T, KIM J D

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Transfer of graphene used for e.g. solar cell, involves vacuum thermal-processing graphene laminate of support substrate and graphene, and transfer-target substrate to transfer graphene of graphene laminate to transfer-target substrate.

LEE B H, LEE S K, LEE S C