国家/地区 美国（83）
IPC部 B（83）
IPC大类 C01（83）
IPC小类 C01B（83） B82Y（56） H01L（34）
H01M（31） H01B（25） B01J（20）
H01G（19） B32B（17） C23C（17）
C09D（12） B05D（11） C30B（9）
C08K（8） C09K（7） H05K（7）
IPC C01B032/184（83）
发明人 JANG B Z（5） ZHAMU A（4） CHOI J（3）
KIM H（3） STOWELL M W（3） TOUR J M（3）
ABDELKADER A M（2） AHMED M（2） BELL J（2）
DRYFE R A W（2） GAZDA J（2） GLASS H（2）
GUINEY I（2） IACOPI F（2） JEFF R A W（2）
公开年 2015（15） 2021（12） 2013（10） 2018（9） 2016（8） 2014（7） 2017（6） 2012（5） 2022（3） 2011（2） 2019（2） 2020（2）
申请年 2013（11）  2015（11）  2014（9）  2012（8）  2016（8）  2017（8）  2020（7）  2021（6）  2011（5）  2019（3）  2022（3）  2010（2）  2018（2） 
专利权人 NANOTEK INST.（5） SAMSUNG ELEC.（5） LYTEN INC（3） SEMICONDUCTO.（3）
UNIV RICE WI.（3） UNIV RICE WI.（3） CHOI J（2） COMMISSARIAT.（2）
FUJITSU LTD（2） HANWHA AEROS.（2） HANWHA TECHW.（2） LG CHEM CO L.（2）
LG CHEM LTD（2） PARAGRAF LTD（2） SAMSUNG TECH.（2） UNIV GRIFFIT.（2）
UNIV MANCHES.（2） UNIV SYDNEY .（2）

Preparing reduced acylated graphene oxide used in electrode active material of lithium secondary battery, involves subjecting graphene oxide to acylation reaction to prepare acylated graphene oxide, and reducing the acylated graphene oxide.

KIM D H, PARK S, YEON S, SHIN K, JIN C, HWANG S H, SEUNGHAE H, JIN C S, HEE S K

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Producing photoluminescence material involves placing plastic piece into working solution which is water, applying micro-plasma onto surface of the working solution, and degrading the plastic piece into multiple smaller molecular and graphene quantum dot.

CHIANG W, WENG R, WENG R J

Making porous graphene layer used in electronic device involves determining first and second temperature thresholds, determining operating parameters of light source and generating beam of light from light source to precursor material layer.

THAM N C Y, SAHOO P K, MURUKESHAN V M, KIM Y, LOW M J

Preparing carbon-silicon three-dimensional structure composite material, involves dissolving graphene quantum dot in ultrapure water, dripping in copper(II) chloride or zinc chloride solution, mixing mixed emulsifier with e.g. graphite oxide aqueous solution and adding hydrazine hydrate to emulsion.

WU X, ZHANG E

Transferring graphene involves forming graphene on first substrate, forming polymer precursor mixture on second substrate, providing graphene oppositely to second substrate having polymer precursor mixture.

GU T J, JANG W, SEO Y, WHANG D, WHANG D M, SEO Y M, JANG W S

Method for manufacturing diamond-graphene hybrid thermal management material, involves converting predetermined thickness of partial area of one side or both sides of diamond base material into vertical graphene, where diamond base material serves as heat spreader.

JU H, LEE J K, SU J

MXene nanoflower used as electrode material of supercapacitor, comprises nanoflowers that are distributed on graphene nanosheet and is attached on small layer graphene sheet layer enhancing material stability and electrochemical performance.

JIANG L, YUAN Y, LI X

Producing graphene doped with nitrogen and sulfur atoms (N,S- DDG) used for doping graphene oxide with nitrogen and sulfur, involves providing microorganisms of halobacteria class which are strictly anaerobic and sulfite-reducing.

IAKIMOV V