国家/地区 中国（5）
IPC部 B（5）
IPC大类 B32（5）
IPC小类 B32B（5）
IPC B32B043/00（5）
发明人 KIM H（2） LI Y（2）
公开年
申请年
专利权人

Preparing graphene/metal composite material useful for high speed train insulated gate bipolar transistor packaging comprises e.g. preparing graphene oxide dispersion, coating layer of metal boron and titanium on surface of graphene film.

CHU K, WANG F, HUANG D, LI Y

Method for transferring graphene from surface of substrate to other substrate, involves affixing growth substrate onto surface of transitory substrate, delaminating graphene layer from substrate, and transferring layer onto target surface.

LERNER M, PAN D, GOLDSMITH B, AFSAHI S J

Method for transferring graphene to wafer in semiconductor device for microelectronics application, involves exfoliating closest monolayer by mechanically splitting spreading layer in which closest monolayer remains on stressor layer.

BEDELL S W, DIMITRAKOPOULOS C D, FOGEL K E, HANNON J B, KIM J, PARK H, PFEIFFER D, SADANA D K, SALDANHA D K, PARK H S

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Roll-to-roll transfer of graphene for producing graphene roll, involves transferring graphene layer on material to substrate by passing through roller portion, immersing obtained laminate into etching solution, and removing material.

AHN J, BAE S, HONG B H, KIM H K, BAE S K, JANG H, JANG S, KOO J B, HONG B, KIM H, HUI H B, HYEON A J, GANG B S, GEUN K H