国家/地区 韩国（6） 美国（3）
IPC部 B（6）
IPC大类 C01（6） B82（4） B01（2）
B32（2） H01（2）
IPC小类 C01B（6）
IPC C01B031/02（5） B82B003/00（3） B01J019/12（2）
B32B009/00（2） B82Y030/00（2） B82Y040/00（2）
C01B031/04（2）
发明人 GON S J（2） KIM H（2） LEE S S（2）
LIM S H（2） PARK M（2）
公开年 2012（2） 2013（2） 2014（2）
申请年 2012（6）
专利权人 KOREA INST SCI TECHNOLOGY（6）

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A

Polyphase carbon nanostructures comprise graphene sheath made of graphene layer, and diamond nano-flakes inserted into graphene sheath.

LEE W S, LEE H J, BAIK Y J, PARK J K

Manufacturing boron-doped reduced graphene, useful as semiconductor with p-type characteristics, comprises adding boron oxide to graphene oxide, removing solvent from resulting solution to obtain solid mixture, and heating the solid mixture.

KIM H, DA YOUNG Y, PARK M, LIM S H, GON S J, LEE S S

Passive element layer of e.g. display element used in e.g. electric equipment, has main layer that is provided with electromagnetic wave attenuation and heat radiation function at near-field region, and is equipped with graphene layer.

KIM S W, HONG B H, CHOI J, KANG J, HWANG S H, BUNG C J, HUI H B, HWI H S, MO G J, U KIM S, HEE H B

Fabricating graphene-controlled nano-graphite, used as basic material for e.g. lithium-ion battery electrode, comprises preparing graphene powders and fabricating graphene-controlled nano-graphite through heat treatment of graphene powders.

LEE J K

Fabricating graphene thin film involves making graphene by reducing graphene oxide using sulfonyl hydrazide-based reducing agent, forming graphene dispersed solution by dispersing graphene into organic solvent, and applying solution to film.

NA S I, KIM D Y, KOO H Y, YUN J M, YEO J S, KIM J K