国家/地区 中国（7）
IPC部 B（7）
IPC大类 B82（7） C01（7） H01（3）
C23（2）
IPC小类 B82Y（7）
IPC B82Y040/00（7） B82Y030/00（5） C01B031/04（5）
C01B032/194（3） H01M004/1393（2） H01M004/583（2）
H01M004/62（2） H01M010/0525（2）
发明人 GU C（7）
公开年 2016（4）
申请年 2016（4） 
专利权人 CHINESE ACAD.（3） UNIV ANHUI N.（3）

Silver nanoparticle/multilayer graphene composite material used e.g. in conductive adhesive ecomprises multi-layer graphene substrate and nano-silver particles uniformly distributed on the surface.

SONG K, WU J, HU X, WU F, XU D, SHI Y, GU C, XU J

Preparation of silver/reduced graphene nanocomposite for detecting activity-enhanced substrates, involves dissolving silver salt and reducing agent in ultrapure water, adding reduced graphene, hydrothermally reacting and washing.

GU C, CHEN Y, HUANG J

Preparing nickel oxide/graphene nano-composite material comprises e.g. dispersing graphite oxide in water ultrasonically to obtain graphene oxide solution, mixing sulfuric acid, carrying out hydrothermal process, compounding and roasting.

HUANG J, LIU X, GU C, GAO L

Preparing molybdenum disulfide/graphene nanocomposite material comprises e.g. transferring mixed solution and three-dimensional columnar reductive graphene oxide into hydrothermal reactor and post-processing.

HUANG J, LIU X, GU C, CHEN Y

Regulating and controlling graphene band gap comprises preparing graphene sample on substrate, coating electron beam resist, coating electrode, exposing, developing, fixing to form and etching spin-coated electron beam resist.

GU C, ZHANG H, YANG H, TANG C, LI J

Preparing nanoscale graphene structure involves selecting substrate and growing graphene on substrate, depositing chromium film on graphene, etching graphene using ion beam etching technology, removing metallic film to obtain pure nanoscale.

GU C, LI J, QUAN B, YANG H, TANG C, ZHANG H

Composite graphene nano-sheet used in coating silicon nano-cone for corner crimping machine comprises surface with silicon nano-cone array substrate forming nano-layer of graphene on surface of silicon cone array.

TIAN S, LI J, GU C, LI L, SUN W, XIA X