国家/地区 日本（10） 世界知识产权组织（6） 美国（4） 中国（3） 韩国（3） 加拿大（2） 欧洲专利局（EPO）（2） 台湾（2）
IPC部 B（10）
IPC大类 C01（10） B82（6） H01（5）
B01（3） C09（2）
IPC小类 C01B（10）
IPC C01B032/15（10）
发明人
公开年 2014（10）
申请年 2013（6）  2014（4） 
专利权人 FUJITSU LTD（2）

Separating graphene used for e.g. semiconductor device, comprises providing container including graphite particle, graphene and solvent, separating graphite particles from container using magnetic field, and discharging solvent from outlet.

KITAURA H, NISHIKI N, NISHIKAWA K, NAKAYA K, TANAKA A, NAKATANI K, NISHIGI N, TANAGA A

Semiconductor device has channel layer whose right edge is bonded with substrate and left edge is floated from substrate, and that is made of graphene by ether bond or ester bond.

JIPPO H

Formation of modified graphene surface used for forming graphene layer for device e.g. nanoelectromechanical systems, involves providing defect-free graphene monolayer, and providing molecules comprising binding group in solvent.

SCHNEIDER G F, DEKKER C, DECKER C

Nanographitic composite for use as anode in lithium ion battery for commercial application, has graphene nanoplatelets coating portion of nanoscale particles to form layer made up of overlapping nanoplatelets.

BAMBHANIA H M, DO I, WANG H, WANG L

Graphene patterning method for forming graphene of predetermined pattern involves bringing a patterning member in which catalyst metal layer of predetermined pattern is formed into contact with substrate having graphene oxide film.

MATSUMOTO T, KASHIWAGI Y

Graphene sheet composition used for negative electrode active material for lithium battery, and conductive support agent for electrode for battery, comprises graphene component, and is formed by treating graphite in supercritical fluid.

IKENOUE Y, KUROZUMI T, HONMA I, TOMAI T

Making oil-absorbing hollow fiber porous membrane involves immersing graphene dispersion liquid into polymer hollow fiber porous membrane module, and reinforcing binding fastness interface between graphene and hollow fiber porous membrane.

HUANG Q, LIU H, XIAO C, ZHAO J, FAN Z

Wiring structure used for semiconductor device e.g. large scale integration, comprises carbon nanotubes and graphene, which are connected electrically through metal block.

SATO S, KONDO D, SATO M, NIHEI M, KONDO T

Method for carrying metal on graphene oxide for metal-oxidation graphene complex, involves adding solution of metal salt or metal ion to oxidation graphene dispersion, and adding alcohol, N,N-dimethylformamide and/or tetrahydrofuran.

NISHINA YUTA

Manufacture of peeling graphene film for preparation of super capacitor element involves applying voltage to graphite electrode immersed in electrolyte solution which contains salt of alkali metal or alkaline earth metal as electrolyte.

FUJITA J, MURAKAMI K, TANG J