国家/地区 中国（6）
IPC部 B（6）
IPC大类 B82（6） C01（6） H01（6）
IPC小类 B82Y（6）
IPC B82Y040/00（6）
发明人
公开年 2011（2） 2012（2） 2013（2）
申请年 2011（6）
专利权人

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Manufacture of graphene nanomesh used for e.g. manufacturing semiconductor device, involves depositing several particles having carbon absorption property on graphene at predetermined temperature or more, heating and removing particles.

SATO S, IWAI T

Method of fabricating graphenic material used as electrical conductor for devices e.g. display, involves growing sheet of graphene on planarized metallic substrate.

JOHNSON A T, LUO Z, JOHNSON A

Post-treating method of graphene used for e.g. biosensor, involves forming metal thin film on graphene, disposing liquid phase carrier on graphene, hardening carrier, and separating carrier and graphene from metal thin film.

WON D, CHO S, YOON J, NA D, WON D K, CHO S M, YOON J H, NA D H, YUAN D

Article e.g. photodetector, comprises graphene layer having work function and metal oxide film having work function greater than work function of graphene layer, formed on graphene layer.

CHEN W, CHEN Z, WEE T S A, XIE L, WANG X, SUN J, ARIANDO, HWANG J, CHEN V, CHEN ZH, WEE T SH A, SUN Y

Substrate having graphene film used in electronic/photonic device comprises base substrate, patterned aluminum oxide film formed on base substrate, and graphene oxide film having graphene atomic layer.

OKAI M, HIROOKA M, WADA Y, IWAI Y, HONMA S, ASHIGAHARA T, TAKAYUKI A, YOSHIAKI I, SHUNICHI H, HIROKA M, HOMMA S