国家/地区 美国（15） 日本（9） 韩国（9） 世界知识产权组织（7） 中国（6） 欧洲专利局（EPO）（3） 德国（2）
IPC部 C（21）
IPC大类 C01（21） H01（8） B32（7）
B82（7） B01（6） B05（4）
D01（4） C30（3） C09（2）
C23（2）
IPC小类 C01B（21） B32B（7） B01J（6）
H01L（6） B82Y（5） B05D（4）
D01F（4） B82B（3） C30B（3）
H01B（3） C09C（2） C23C（2）
IPC C01B031/04（21）
发明人 CHOI J（6） CHOI J Y（6） SHIN H（6）
SHIN H J（6） YOON S（6） YOON S M（6）
IN Z（3） JANG B Z（3） ZHAMU A（3）
LEE J（2）
公开年 2009（12） 2010（8）
申请年 2008（21）
专利权人 SAMSUNG ELEC.（6） JANG B Z（3） NANOTEK INST.（3） ZHAMU A（3）
NEC CORP（2）

Semiconductor device for liquid crystal display, includes transparent substrate having graphene film, graphite film, or amorphous carbon film such that carbon film is transferred to substrate from carbon material substrate by laser beam.

HIURA H, KANAYAMA T, TADA T

Hydrogen-gas occlusion graphene used for manufacturing hydrogen gas, is obtained by carrying out chemical adsorption of hydrogen molecule to graphene surface.

KAWASHIMA Y

Dispersible and electrically conductive nano graphene platelet material useful for future nano-electronic application comprises single-layer or multiple-layer graphene sheet.

JANG B Z, ZHAMU A

Forming dispersible nano graphene/graphene oxide platelet material, useful in e.g. solar cells, comprises preparing graphite intercalation compound/graphite oxide from laminar graphite material and exposing to specific temperatures.

JANG B Z, ZHAMU A

Producing nano graphene platelet material, useful e.g. as conductive additive in transparent electrodes for solar cells, comprises subjecting graphitic material to supercritical fluid e.g. water and then rapidly depressurizing the fluid.

JANG B Z, ZHAMU A

Graphene nanostructure fabricating method for semiconductor device, involves performing anisotropic etching by using aligned oxide nanostructure as mask, and removing remaining oxide nanostructure after anisotropic etching.

HONG S, KIM T H, LEE J, HONG S H, LEE C Y, KIM T

Device for cutting graphene, includes reception to receive graphene, cutting element loaded with catalytically active material in cutting edge area, device to displace reception and cutting element with the cutting edge, and heating device.

KIRSTEIN S, RABE J P, SEVERIN N, RABE J

Hydrogen storage material for hydrogen storage device, comprises alkaline earth metal ions and covalent-bonded graphenes having structure by forming junction point with carbon atoms on either end portions of graphene monolayer.

JI S, KIM G, LEE J, PARK N

Graphene sheet used as raw material for manufacturing carbon nanotube, is obtained by stripping layer of layered structure of natural graphite.

SUGITA T

Method for processing graphene sheet type-material used for semiconductor integrated circuit device, involves irradiating vacuum UV rays to surface of graphene sheet-type material to remove or modify outermost surface layer of material.

ASANO T