国家/地区 韩国（10） 美国（8） 世界知识产权组织（8） 中国（5）
IPC部 C（10）
IPC大类 C01（10） B82（6） B01（5）
H01（4） B32（3） C23（3）
IPC小类 C01B（10）
IPC C01B031/02（10） B82B003/00（5） B01J019/12（4）
C01B031/04（4） B82Y040/00（3） C23C016/26（3）
H01B001/04（3） H01B005/14（3） B01J019/10（2）
B32B043/00（2） B82Y030/00（2）
发明人 KIM H（10）
公开年 2012（4） 2013（4） 2014（2）
申请年 2012（10）
专利权人 KIM H（3） HANWHA TECHW.（2） KOREA ADV IN.（2） KOREA ADVANC.（2）
KOREA INST S.（2） SAMSUNG TECH.（2） UNIV SUNGKYU.（2）

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A

Hierarchical structure of graphene-carbon nanotubes is obtained by growing graphene into carbon nanotubes having hierarchical structure by adding metal nanoparticles on graphene, and is metal-functionalized by metal precursor.

BAE S, KIM H, OH I, BAE S H, KIM H J, OH I K

Manufacturing boron-doped reduced graphene, useful as semiconductor with p-type characteristics, comprises adding boron oxide to graphene oxide, removing solvent from resulting solution to obtain solid mixture, and heating the solid mixture.

KIM H, DA YOUNG Y, PARK M, LIM S H, GON S J, LEE S S

Manufacture of large-scale three dimensional transparent graphene electrode used in electric and electronic applications, involves spraying conductive macromolecule solution and graphene solution, and drying.

HUH H, KIM W S, KIM H J, YOO E S, CHOI S H, HWANG J Y, JANG J Y, KIM T I, HEO H, HYEONG P N, SIK K U, JIN K H, SEONG Y E, HUN C S, YEONG H J, YEONG J J, IL K T, PARK N H, JIN T, ZHANG Z, CHOE S, HWANG J, KIM H, KIM W, YOO E

Manufacture of graphene/carbon nanotube nano structure involves preparing and irradiating graphite and compound of catalyst metal and ionic liquid with microwave.

OH I, SRIDHAR V, KIM H, OH I K, VADAHANAMBI S, KIM H J

Graphene-based laminate has substrate, graphene layer which is formed at upper portion of substrate, and organic dopant which is formed on surface(s) of substrate.

KIM H, KIM T, YANG W, KIM H K, KIM T Y, YANG W S

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Graphene sheet used for transparent electrode for e.g. display device, has lower sheet including layers of graphene and ridge formed on lower sheet and includes more layers of graphene.

KWON S, PARK K, KIM S, KWAK J, KWON S Y, KIM S Y, KWAK J S, KIM H

Synthesizing graphene, comprises loading catalyst metals into chamber, increasing sizes of grains of catalyst metals, raising temperature inside the chamber while providing vapor carbon source and forming graphene.

SONG Y, KIM H, HONG B, AHN J, AHN J H, HONG B H, KIM H K, SONG Y I

Graphene transferring method, involves adhering heat exfoliation sheet with target substrate, and pressurizing heat exfoliation sheet pressurized with graphene according to atmospheric condition.

HONG B H, CHOI J, KIM Y, KIM K S, KANG J, KIM H, CHOI J B