国家/地区 中国（5）
IPC部 C（5）
IPC大类 C23（5） H01（2）
IPC小类 C23C（5）
IPC C23C014/06（5）
发明人 ZHANG Y（5）
公开年
申请年
专利权人

Molybdenum disulfide/graphene composite heterojunction used in e.g. satellite large power component, comprises molybdenum disulfide layer arranged on the substrate, graphene layer arranged on the molybdenum disulfide layer, and graphene layer includes first graphene layer and second graphene layer.

CUI W, ZHANG Y, YANG J, HE Y, LIU M, PENG S, WU J, ZHAO Y, HU Z

Photodetector is prepared by etching portion of insulating layer on planar silicon to form detector window, depositing indium selenide film to form heterojunction, and depositing graphene and metal thin film electrodes to form ohmic contact.

WU C, KANG J, ZHU H, ZHANG Y, WANG B, LUO L

Preparation of graphene insulation for metal substrate comprises heating graphene sample, depositing silicon on graphene surface and cooling.

ZHANG Y, WANG Y, GAO H

Method for growing graphene in dielectric material directly, involves cleaning silicon wafer with ethyl alcohol, acetone and deionized water, placing small aromatic molecules in crucible, followed by depositing, annealing and etching.

WANG Q, ZHANG Y, SUN X, ZHUO Q

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y