国家/地区 中国（7）
IPC部 C（7）
IPC大类 C23（7） C01（3） C08（2）
IPC小类 C23C（7） C01B（3） C08K（2）
IPC C23C016/26（7）
发明人 CHENG H（7）
公开年 2018（2） 2020（2）
申请年 2016（2）  2019（2） 
专利权人 INST METAL R.（6）

Transferring two-dimensional material by using higher fatty alcohol or higher fatty acid, comprises e.g. spin-coating to obtain higher fatty alcohol or fatty acid/two-dimensional material/substrate complex and obtaining higher aliphatic alcohol or fatty acid/two-dimensional material complex.

CHENG H, XU C, ZHOU T, REN W

Preparing metal/graphene/single atom composite catalytic material involves reparing pure foam metal material, preparing graphene on the surface of pure foam metal material by chemical vapour deposition method, and vacuumizing.

CHENG H, ZHONG S, MO H, ZENG Y, WANG Z, WANG Y, LIU Y, HU M, WU H, CAO Y

Fast chemical vapor deposition growth of single-layer graphene on non-metallic substrates comprises e.g. raising non-metallic substrate to growth temperature in non-oxidizing atmosphere, and charging reaction system with carbon source.

MA L, WEI S, REN W, CHENG H

Graphene-based composite filler comprises a graphene powder having a hollow cavity and a functional material filled in the hollow cavity, which is prepared by heating the reaction furnace cavity to a set temperature.

REN W, MA C, LIU H, DONG S, DU J, CHENG H

Preparation of graphene-damping composite material by chemical vapor depositing or chemical coating graphene on surface of foam metal skeleton, and injecting polymer using vacuum assisted resin transfer molding or resin dipping method.

ZENG Y, WANG H, YING Z, MA C, CHENG H

Improving electrochemical gas graphene layer stripping transfer speed comprises E.G. growing graphene on initial substrate, transferring medium layer covered on the modified dielectric surface, and stripping.

MA L, REN W, DONG S, CHENG H

Chemical vapor deposition (CVD) method for growing large area graphene at low cost, involves using untreated rolled metal as substrate of CVD graphene growth and using surface of residual grease as carbon source of graphene growth.

CHENG H, MA L, REN W