国家/地区 中国（6）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B032/186（6）
发明人 XU S（6）
公开年 2019（2） 2020（2） 2021（2）
申请年 2019（4）  2021（2） 
专利权人 UNIV PEKING（6）

Graphene cold wall growth device, has power supply whose two poles pass through two through holes of reaction chamber, where two poles of power supply are connected with upper electrode plate and lower electrode plate.

CHEN Z, JI N, SHEN C, XU S, ZHANG J

Preparing vertical graphene-based thermal interface material comprises preparing vertical graphene through plasma-enhanced chemical vapor deposition process under action of electric field.

ZHANG J, XU S, JI N, CHEN Z

Vertical graphene growth device has lead that is connected with power supply through hole so that electric field is formed between upper electrode plate and lower electrode plate in vertical direction.

ZHANG J, XU S, SUN Y, GAO Z, LUO J

Growing vertical graphene comprises placing substrate in reaction chamber, introducing carbon source and vertical electric field, and performing vapor deposition reaction on substrate surface to grow vertical graphene.

ZHANG J, XU S, SUN Y, GAO Z, LUO J

Graphene powder continuous discharge preparation method involves passing inert gas into microwave plasma chemical vapor deposition system, generating plasma, passing carbon source, and performing graphene powder vapor phase growth.

ZHANG J, SUN Y, LIU H, GAO Z, XU S

Preparation of graphene powder by subjecting carbon source to chemical vapor deposition process without using substrate.

ZHANG J, XU S, GAO Z, SUN Y, LIU H