国家/地区 美国（5） 中国（4） 韩国（4） 世界知识产权组织（4） 日本（2） 台湾（2）
IPC部 B（6）
IPC大类 B01（6）
IPC小类 B01J（6）
IPC C01B031/04（6）
发明人
公开年 2014（3） 2015（3）
申请年 2014（6）
专利权人

Method of preparing graphene from methane using catalyst in a reactive furnace.

CHEN M, CHEN B, KOO H, CHEN B F, KOO H S

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Apparatus for manufacturing graphene comprises a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source, and a feeder for continuously supplying a catalyst metal.

MOON J, CHOI M, JUNG M

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y