国家/地区 韩国（7） 美国（5） 中国（2） 世界知识产权组织（2）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B031/02（7）
发明人
公开年 2014（7）
申请年 2013（3）  2012（2）  2014（2） 
专利权人 HANWHA AEROS.（2） SAMSUNG TECH.（2）

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Synthesis of graphene involves coating anti-corrosive material to surface of catalyst metal foil, placing catalyst metal foil coated with anti-corrosive material in chemical vapor deposition chamber and creating vacuum in chamber.

WON D K, KIM N Y

Board for forming graphene layer, comprises board layer; metal catalyst layer disposed on the board layer and functioning as a catalyst for forming the graphene layer; and stress reduction layer to reduce stress of the metal catalyst layer.

CHO B J, MUN J H

Making graphene structure involves depositing metal layer over silicon carbide substrate, and performing first heat treatment on substrate over which metal layer is deposited to form composite layer and electrically neutral graphene layer.

AHN J, SHIN H, SONG I, AHN J R, SHIN H C, SONG I K

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H

Manufacture of graphene involves forming substrate, growing silica layer on substrate, growing crystalline phase silicon carbide film on silica layer, depositing nickel layer, heat-treating substrate and cooling substrate.

CHUNG G S