国家/地区 韩国（13） 美国（7） 世界知识产权组织（6） 日本（5） 法国（4） 中国（3） 德国（3） 欧洲专利局（EPO）（3） 台湾（2）
IPC部 C（26）
IPC大类 C01（26）
IPC小类 C01B（26）
IPC C01B031/02（21） C23C016/26（18） B82Y030/00（8）
B82Y040/00（8） C01B031/04（8） H01B001/04（4）
C23C016/56（3） B01J019/08（2） B01J023/76（2）
B32B033/00（2） C01B031/00（2） C23C014/06（2）
C23C014/34（2） C23C016/02（2） C23C028/00（2）
发明人 BACSA R（2） CHOI I S（2） LEE K J（2）
SERP P（2）
公开年 2013（26）
申请年 2011（26）
专利权人 CENT NAT REC.（3） UNIV SUNGKYU.（3） CNRS CENT NA.（2） INST NAT POL.（2）
INT BUSINESS.（2） JX NIPPON MI.（2） KOREA ADV IN.（2） KOREA ADVANC.（2）

Coproducing carbon nanotube and graphene used in polymer matrix, by decomposition at high temperature of carbon source in gas state, comprises contacting carbon source with catalyst comprising mixture of active catalyst-A and catalyst-B.

BEAUSOLEIL J, SERP P, BACSA R, CAUSSAT B

Producing graphene comprises contacting solid catalyst in divided state comprising mixed oxide with gaseous composition flow comprising carbon source, where solid catalyst has single crystal structure and average crystalline domain size.

BACSA R, SERP P

Manufacture of graphene involves forming carbon-doped metal substrate, melting carbon-doped metal substrate by laser beam, cooling substrate and moving carbon-doped metal substrate in cooling phase.

LEE K J, CHOI I S

Producing graphene comprises doping carbon in metallic board, fusing board with carbon by irradiation, cooling fused metallic board, where carbon moves to metal board surface after cooling and growing grapheme on metal board surface.

LEE K J, CHOI I S

Formation of patterned graphene layer on substrate used for low-noise amplifier, involves forming patterned structure(s) of carbide-forming metal or metal-containing alloy on substrate, applying layer of graphene and heating.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K, AFZALIARDAKANI A C O I

Copper foil for manufacture of graphene for e.g. transparent electrode, conductive thin film of display element, mercury-free fluorescent lamp and carrier of drug delivery system, includes specified amount of preset plane on surface.

KOBIKI T, SAKAGUCHI K, KOHIKI M

Manufacturing film of graphene, comprises depositing metal layer on surface of substrate, and continuously realizing buried carbon rich area inside metal layer by creating and maintaining carbon rich area so as to form film of graphene.

COJOCARU C

Transferring graphene, comprises forming graphene on substrate of metal film, forming polymer transfer layer on graphene and then laminating to form first laminate, and removing laminate and then heat treating to form second laminate.

JAEKYU J, SEUNGMIN J, YOUNGKEUN L, HONG Y

Synthesizing graphene sheet on platinum silicide, by forming stack by e.g. placing first layer of diffusion barrier material on substrate and placing second layer of silicon carbonaceous material on first layer and thermally treating stack.

ZENASNI A

Preparation of doped graphene involves cleaning metal material and drying, subjecting dried substrate in reaction chamber, introducing protective gas, heating, and introducing gaseous carbon-containing and nitrogen-containing materials.

WANG Y, YUAN X, ZHOU M