国家/地区 中国（4） 美国（3） 世界知识产权组织（3） 欧洲专利局（EPO）（2） 日本（2）
IPC部 C（6）
IPC大类 C23（6）
IPC小类 C23C（6）
IPC C30B029/02（6）
发明人
公开年 2021（6）
申请年 2020（4）  2021（2） 
专利权人

Preparing two-dimensional compound semiconductor thin film useful in micro-nano electronic device, comprises placing insulating substrate with single-layer two-dimensional layered material/metal oxide film vertical heterostructure on surface in heating device, and introducing carrier gas.

SHI Z, ZHANG C, ZHU H, WU T, GAO B

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Vapor-deposited graphene layer growth preparation device comprises high-vacuum sealing plug-in valve transversely arranged on upper part of sealed cavity near top, thermal field base fixedly installed at bottom of sealed cavity.

ZHAO B, FU S, ZHANG H

Multi-chamber semiconductor thin film epitaxy device comprises growth chambers and mechanical arm, where growth chambers have graphene and semiconductor material growth chamber, where graphene growth chamber used to grow graphene film.

GUO L, WEI T, RAN J, WANG J

Two dimensional (2D) hetero structure used in article of manufacture, comprises graphene deposited on substrate and borophene coupled with graphene on substrate to form 2D borophene- graphene hetero structure.

HERSAM M C, LIU X