国家/地区 中国（6） 韩国（6） 美国（6） 日本（4） 世界知识产权组织（4） 欧洲专利局（EPO）（2） 印度（2）
IPC部 B（11）
IPC大类 B01（11） C01（8） B82（4）
H01（3） C02（2） C23（2）
IPC小类 B01J（11）
IPC B01J023/755（11）
发明人
公开年 2014（11）
申请年 2014（6）  2013（3）  2012（2） 
专利权人

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Preparing graphene, which is used for manufacturing semiconductor circuit, comprises supplying gas including carbon dioxide, methane and water on metal catalyst, and reacting and cooling the resultant.

SON I H, LEE S J

Graphene-loaded metal nanocomposite material used for oxidation reaction of benzyl group, comprises specified amount of metal nanoparticles having specified range of particle diameter, uniformly dispersed in graphene.

FENG L, LIU R, ZHU H, HE G, SONG G, JI J, YU X

Graphene copper-nickel composite photocatalyst used in sewage treatment and organic degradation, comprises copper-nickel bimetal, and single-flake graphene.

YAO S, BAN C, JIA Z, YANG M, LI S, PU X, CHEN Y

Preparation of porous graphene involves processing biomass-based carbon source with catalyst, obtaining intermediate product and heat-preserving intermediate at predetermined conditions.

ZHU J, LIU Z, ZHOU G, LIU D, LIU X, TANG Y, WANG E, ZHANG J, ZHENG Y

Manufacturing graphene film involves preparing catalyst metal having at least surface on which graphene is formed, forming support layer on graphene, and isolating graphene and support layer from catalyst metal.

NA D, LEE E, YOON J, NA D H, LEE E K, YOON J H, LI Y

Graphene patterning method for forming graphene of predetermined pattern involves bringing a patterning member in which catalyst metal layer of predetermined pattern is formed into contact with substrate having graphene oxide film.

MATSUMOTO T, KASHIWAGI Y

Graphene-based nano-metal composite material comprises metal particles having specific value of particle size supported on graphene having three-dimensional porous foam structure matrix having pore size of specific value.

CHENG G, JIANG Z, LI N, WANG W

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Method for manufacturing graphene structure using carbon black, involves heat treating graphite painted candles, graphite painted candles are mixed with carbon black and carbon black is mixed with wet duster.

LEE J H, LEE B H, KWAN W L, REYUN K L