国家/地区 美国（8） 韩国（6） 欧洲专利局（EPO）（4） 世界知识产权组织（4） 日本（3） 中国（2）
IPC部 B（10）
IPC大类 B05（10） H01（10） C01（9）
B82（7） B32（6） C23（4）
IPC小类 B05D（10）
IPC H01B001/04（10）
发明人 CHOI J Y（2） IVANOVICI S（2） SHIN H J（2）
公开年 2011（10）
申请年 2010（5）  2011（4） 
专利权人 SAMSUNG ELEC.（3） BASF SE（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Super hydrophobic graphene, has surface part in which multiple cylindrical projections are formed, where one of projections occupies 20 percent of graphene in total body surface area.

CHOI J Y, HAN G H, LEE Y H, SHIN H J

Preparation of graphene-type conductive material involves applying oxide graphene sol and metal salt solution and/or metal colloidal solution on substrate layer, separating, forming solid film and treating at specified condition.

LIANG M, ZHI L

Method for manufacturing graphene thin film of capacitor, involves manufacturing precursor solution, dispersing graphite oxide powder into solvent, and forming graphene thin film by generation of static attraction.

KIM K B, HEECHANG Y, SEONG M B, BEOM K G, CHANG Y H, MIN P S

Producing two-dimensional nanomaterials comprises e.g. providing a mixture comprising e.g. graphene oxide particles and water, adding a sol precursor compound to the mixture, and reacting the mixture in a sol/gel process to form gel.

FENG X, IVANOVICI S, MUELLEN K, YANG S, MULLEN K

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U

Roll-to-roll doping method for large-area graphene area, involves passing graphene film through doping solution that contains dopant or dopant vapor for doping graphene film.

AHN J, BAE S, HONG B H, KIM H K, BAE S K, GANG B S, GEUN K H, HUI H B, HYEON A J

Producing metallized surface, useful e.g. to produce heatable carpets, comprises applying a formulation comprising metal powder, depositing a metal on textile surface, and applying a layer comprising carbon (e.g. graphene).

STEINIGNOWAKOWSKI C, NOERENBERG R, IVANOVICI S, BREYER P, REICHERT J, STAINIG N K, REICHERT YU, STEINIG N C, NORENBERG R

Composite structure for manufacturing a logic device, a memory device, a supercapacitor and a flexible and stretchable device, comprises graphene sheets disposed at a regular interval, and a nanostructure oriented through the sheets.

CHOI B, LEE E, WHANG D, KIM B, CHOE P Y, I E K, HWANG T M, KIM P S, CHOI B L, WHANG D M, KIM B S, LEE E K

Preparing graphene base, comprises disposing carbon-based material on surface of substrate incapable of catalyzing graphitization, disposing graphitization catalyst layer on material and forming graphene by thermally treating substrate.

SHIN H, CHOI W, CHOI J, YOON S, SHIN H J, CHOI W M, CHOI J Y, YOON S M

Structure, useful for fabricating electrical devices, comprises layer of graphene supported on a substrate, which is pre-selected to have a specified coefficient of thermal expansion, for inducing controlled stress in graphene layer.

QUITORIANO N J, KAMINS T I, BRATKOVSKI A M