国家/地区 台湾（6） 中国（5） 美国（3）
IPC部 C（7）
IPC大类 C01（7） B82（3） B32（2）
H01（2）
IPC小类 C01B（7）
IPC C01B031/04（7） B82Y040/00（2）
发明人 SUNG C（7）
公开年 2014（3） 2012（2）
申请年 2012（7）
专利权人 RITEDIA CORP（5） LAIZUAN CO L.（4） SUNG C（2）

Circulating system for manufacturing graphene sheets which manufactures in high speed and in large quantities of graphene sheets having larger size and more perfect hexagonal planar structure.

SUNG C, LIN I, LIN H, SUNGCHIENMIN, LINICHIAO, LINHUNGCHENG

Manufacture of graphene involves providing carbon source to molten solvent contained in reactor, precipitating carbon atoms of carbon source in supersaturated state of solvent surface and collecting graphene layer at discharge opening.

LIN H, LIN Y, SONG J, SUNG C, LIN I

Graphite reinforced composite material for e.g. thermal grease and conductive glue comprises single or multiple graphene layer formed from highly graphitized graphene dispersion and substrate where graphene layer is uniformly dispersed.

LIN Y, SONG J, SUNG C, LIN I

Magnetic memory unit manufacturing method, involves forming carbon solvent layer with upper surface that is provided with temporary base material, and forming first surface of graphene-containing layer with holes.

LIN H, LIN Y, SONG J, SUNG C, LIN I

Fabricating patterned graphene, comprises forming catalytic layer on substrate and carbon layer of e.g. iron on catalytic layer, photolithographically etching on carbon layer and heating obtained layer to form patterned graphene layer.

SUNG C, LIN I, LIN H, LIN Y, SONG J

Semiconductor structure has semiconductor substrate comprising single crystalline silicon-containing semiconductor material, semiconductor carbide layer and graphene layer including graphene monolayers.

CHU J O, DIMITRAKOPOULOS C D, GRILL A, SUNG C

Making graphene on diamond substrate, comprises applying metal layer to crystallographic face of diamond substrate, and heating diamond substrate under vacuum to convert portion of diamond substrate at crystallographic face into graphene.

SUNG C, SONG J