国家/地区 韩国（5） 美国（2）
IPC部 B（6）
IPC大类 B01（6） C01（6） B82（3）
IPC小类 B01J（6）
IPC B01J019/12（6）
发明人 AHN J（2） BAE S K（2） GON S J（2）
KIM H（2） LEE J（2） LEE S（2）
LEE S K（2） LEE S S（2） LEE W（2）
LIM S H（2） PARK M（2）
公开年
申请年 2012（2） 
专利权人 KOREA INST SCI TECHNOLOGY（6）

Ciliated graphene composite useful for triboelectric nano generator, comprises multiple of graphene cilia formed to be spaced apart from each other on surface of porous graphene structure.

CHOI K H, HYEONG S, OUNG P S, KIM D Y, BAE S K, LEE S K, LEEARAM

Manufacturing laser-induced graphene oxide structure involves applying a precursor solution on a graphene oxide precursor material containing a polymer and selectively irradiating a laser light source to the synthesis region.

KIM K M, BAE S K, KIM T, LEE S K, JAI H W, KANG D J

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A

Manufacturing boron-doped reduced graphene, useful as semiconductor with p-type characteristics, comprises adding boron oxide to graphene oxide, removing solvent from resulting solution to obtain solid mixture, and heating the solid mixture.

KIM H, DA YOUNG Y, PARK M, LIM S H, GON S J, LEE S S

Fabrication method for AA stacked graphene-diamond hybrid material involves maintaining diamond matrix at temperature having stable graphene phase in hydrogen gas atmosphere, and converting diamond surface into graphene in certain thickness.

LEE J, LEE S, AHN J, LEE W

Stacked graphene-diamond hybrid material for semiconductor device comprises diamond matrix, and stacked graphene configured to be converted in certain thickness from a lattice plane cut by surface of matrix due to alternative loss of plane.

AHN J, LEE J, LEE S, LEE W, AHN J P, LEE J K, LEE S C, LEE S H, LEE W S, LEE U