国家/地区 中国（6）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B031/04（4） C01B031/00（3）
发明人 CHENG C（6）
公开年 2015（5）
申请年 2015（6）
专利权人 UNIV ZHEJIAN.（5）

Capacitor for semiconductor device, has dielectric sheet arranged over first graphene structure, and second graphene structure provided on dielectric sheet and comprising multiple graphene layers.

JOU C, KO C, CHIU P, CHENG C, LU C, CHEN H, HSUEH F, HUANG C, JOU C P, KO C H, CHIU P W, CHENG C C, LU C C, HUANG C F, CHEN H N, HSUEH F L, HUANG Q, KE Z, QIU B, XUE F, ZHOU C, ZHENG Z, LV Z, WANN C H

Preparation of fluorinated graphite/graphene heterojunction involves placing multi-graphene sample in reaction chamber, evacuating pressure, feeding sulfur hexafluoride gas, performing plasma excitation, reacting and removing sample.

CHENG C, GUO H, LI W, LIU W, LIU X, LU W, MA L, MENG N, SHI T, WAN X, WANG F, WANG X, XU Y, ZHOU H

Preparation of fluorinated graphene involves adding graphene to reaction chamber, evacuating pressure inside reaction chamber, passing resultant product through sulfur hexafluoride gas, and performing plasma excitation of gas.

CHENG C, GUO H, LI W, LIU W, LIU X, LU W, MA L, MENG N, SHI T, WAN X, WANG F, WANG X, XU Y, ZHOU H

Preparing fluorinated graphene oxide involves performing oxidation of graphene into graphene oxide, and placing graphene oxide sample into pumping chamber of deep reactive etching machine.

CHENG C, GUO H, LI W, LIU W, LIU X, LU W, MA L, MENG N, SHI T, WAN X, WANG F, WANG X, XU Y, ZHOU H

Fluorinated graphene foam preparation method involves taking graphene foam sample, putting sampling indoor deep reaction etching machine, pumping, putting into reaction cavity, and pumping using sulfur hexafluoride gas.

CHENG C, GUO H, LI W, LIU W, LIU X, LU W, MA L, MENG N, SHI T, WAN X, WANG F, WANG X, XU Y, ZHOU H

Transferring of fluorinated graphene involves fluorinating graphene samples, spin coating with polymethyl methacrylate, heating, placing treated sample in electrolyte, stripping original substrate, immersing sample in water and drying.

CHENG C, GUO H, LI W, LIU W, LIU X, LU W, MA L, MENG N, SHI T, WAN X, WANG F, WANG X, XU Y, ZHOU H