国家/地区 日本（5） 韩国（4） 美国（4）
IPC部 C（5）
IPC大类 C01（5） H01（4） B01（2）
C23（2）
IPC小类 C01B（5）
IPC C01B032/15（5）
发明人 MATSUMOTO T（4） IFUKU R（3）
公开年 2018（2）
申请年
专利权人 TOKYO ELECTRON LTD（5）

Anisotropic etching of graphene used as electronic material, involves generating hydrogen plasma using microwave plasma, and anisotropically etching graphene using generated hydrogen plasma.

IFUKU R, MATSUMOTO T

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Production of graphene used in semiconductor applications, involves forming catalyst metal film on substrate, which includes introducing carbons into catalyst metal film, heating catalyst metal film, and cooling catalyst metal film.

NISHIDE D, MATSUMOTO T, IFUKU R

Processing of to-be-processed material for electronic device, involves forming resist mask on graphene film of to-be-processed material and remove resist residue on graphene film by exposing to-be-processed material to oxygen radicals.

KAGAYA MUNEHITO, KAGAYA M

Graphene patterning method for forming graphene of predetermined pattern involves bringing a patterning member in which catalyst metal layer of predetermined pattern is formed into contact with substrate having graphene oxide film.

MATSUMOTO T, KASHIWAGI Y