国家/地区 韩国（77）
IPC部 C（77）
IPC大类 C01（77）
IPC小类 C01B（77）
IPC C01B031/00（77）
发明人 KIM H（6） KIM J（4） AKSAY I（3）
AKSAY I A（3） FENG X（3） KIM Y J（3）
LEE H（3） LEE J（3） MUELLEN K（3）
MULLEN K（3） SHIN H（3） SHIN H J（3）
TOUR J（3） TOUR J M（3） WU Z（3）
公开年 2013（14） 2010（12） 2014（12） 2012（10） 2011（8） 2015（6） 2017（4） 2009（3） 2007（2） 2008（2） 2016（2）
申请年 2011（12）  2012（12）  2013（12）  2009（9）  2014（8）  2010（6）  2008（5）  2015（4）  2007（3）  2016（3）  2005（2） 
专利权人 KOREA INST S.（5） SAMSUNG ELEC.（5） UNIV SUNGKYU.（5） BASF SE（3）
MAX PLANCK G.（3） UNIST ACADIN.（3） UNIV PRINCET.（3） UNIV RICE WI.（3）
ABC SANG CO .（2） BASF CHINA C.（2） KIM H（2） KIM J（2）
KUBOTA Y（2） LG ELECTRONI.（2） LIU G（2） LOCKHEED MAR.（2）
POSTECH ACAD.（2） POSTECH ACAD.（2） SEKISUI CHEM.（2） SEKISUI CHEM.（2）

Production method for producing graphene on copper substrate, involves continuously monitoring temperature of copper sheets and heating copper sheets to specified temperature for predetermined time using electromagnetic induction heater.

HABERLE TAPIA P, ORELLANA GOMEZ C, HABERLE T P, ORELLANA G C, HAEBERLE TAPIA P, HAEBERLE T P

Making integral 3-dimensional graphene-carbon hybrid foam used e.g. to make fumed heat sink and heat pipe, comprises e.g. mixing multiple particles of -graphitic material and -solid polymer carrier material in impacting chamber.

ZHAMU A, JANG B Z

Graphene sheet combining graphite flake structure used as heat-dissipation structure and in light and thin current electronic products, comprises graphite nanoplatelet material and graphene material mixed in the nanoplatelet material.

CHOU T, WU F, CHAN C, LIAO W, CHANG H, LI L, ROSS J, YU W F, CHIEH C C, HSIEN L W, PIN C H, JONG L L, WU F Y, CHAN C C, LIAO W H, CHANG H P, LI L J

Industrial method of producing large-scale quantities of graphite oxide, graphene oxide, and/or graphene for use as e.g. catalysts involves ultrafine grinding, flotation purification, graphite oxidative transformation, and purification.

JALBOUT A

Perforated sheet of graphene-based material having an area, comprises perforated single layer of graphene and many perforations in single layer of graphene located over the area of the single layer of graphene.

SWETT J L, BEDWORTH P V, HEISE S E, SINTON S W, SIMON S M

Concentrating stabilized solution of graphene oxide having continuous phase, comprises adding absorbent material to solution, and absorbing portion of the phase with material to form solution having higher graphene oxide concentration.

MAJUMDER M, AKBARIVAKILABADI A

Preparation of graphene quantum dot used in e.g. light-emitting device, involves adding potassium peroxymonosulfate to carbon material by solvothermal redox reaction, sono-Fenton reaction or sonophoto-Fenton reaction of carbon material.

LEE H, SHIN Y H, HYUN D, PARK J, KIM K S

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Manufacture of doped reduced graphene oxide involves dispersing graphene oxide in organic solvent, adding boron trifluoride etherate, alkyl thiol, aryl thiol, alkyl amine or arylamine to dispersed graphene oxide, and processing.

LEE H

Conductive carbon used in material for forming electrodes, comprises hydrophilic solid-phase component having preset microcrystal size in graphene surface direction calculated from Raman spectrum.

ISHIMOTO S, KUBOTA S, MINATO Y, NAOI K, NAOI W, TAMAMITSU K