国家/地区 美国（4） 韩国（2）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C23C016/26（5）
发明人
公开年 2017（3）
申请年 2016（5）
专利权人

Large area graphene growth apparatus has second heater that is installed at lower portion of chamber, and second heater driving unit is configured to adjust position of second heater with respect to chamber.

GI C K, CHEOL K G

Method of growing graphene for use in e.g. biomedical applications, involves introducing reaction gas containing oxygen-containing carbon source into furnace, heating, UV-irradiating reaction gas and depositing graphene film on substrate.

CHIU J, YEH C, CHIU P, QIU B, QIU R, YE Z

Transfer-free method for forming high-quality graphene layer on graphene electrode, involves depositing titanium layer on base substrate by sputtering process, and growing graphene on deposited layer by chemical vapor deposition process.

YOON S, PARK B, YOON S G, PARK B J

Apparatus used to form graphene layer comprises reaction chamber containing support layer, heating element to heat the support layer, and control device configured to control the formation of graphene layer on surface of support layer.

BOUCHIAT V, CORAUX J, HAN Z

Copper substrate for growing graphene monolayer has second copper layer in contact with first copper layer, and has second copper percentage, second oxygen percentage and second average thickness.

YAGER T A, ROBINSON J