国家/地区 美国（5）
IPC部 C（5）
IPC大类 C01（5） H01（4） C23（2）
IPC小类 C01B（5）
IPC C01B032/186（2） C23C016/26（2） H01L021/285（2）
H01L021/768（2）
发明人 LEE C（5）
公开年 2022（5）
申请年 2021（4） 
专利权人 SAMSUNG ELEC.（3）

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Black phosphorus-two dimensional material complex for electronic device, includes first and second two-dimensional material layers being configured to be coupled to each other by van der Waals force, and black phosphorus sheet in which phosphorus atoms are covalently bonded.

YOON S, LEE C, HWANG H, SHIN H, SEOL M, SUK S H, SHIN H J, HWANGHYUNTAE, LEE C S, YUNE S I, YIN S, LI C, SHEN X

Porous carbon material of core-shell structure used in sulfur-carbon composite used in lithium secondary battery, comprises core comprising stack structure of carbon sheets and carbon-containing shell surrounding core.

JEONG Y, SOHN K, LEE C, JUNG Y C, LI C, SUN Q

Manufacturing aluminum nitride used as packaging substrate of semiconductors, involves heating electrolyte comprising choline chloride, urea, aluminum chloride, boric acid and ascorbic acid, applying operating current to electroplate aluminum on workpiece, and annealing aluminum on the workpiece.

CHUNG C, LEE C, PENG K, KUNZENG P, LEE C Y, ZHONG Q

Forming graphene product including nanocrystalline graphene by plasma enhanced chemical vapor deposition process, involves growing nanocrystalline graphene directly on substrate using plasma of reaction gas.

LEE E, LEE S, BYUN K, KIM C, LEE C, SHIN H, SHIN K, SONG H