国家/地区 美国（7）
IPC部 B（7）
IPC大类 B29（7）
IPC小类 C01B（7）
IPC C01B031/02（5） B32B038/10（4） C01B031/04（3）
B32B037/00（2） B32B037/10（2） B82B003/00（2）
B82Y030/00（2） C23C016/26（2） G06F003/041（2）
G06F003/044（2） G06F003/045（2） H01B005/14（2）
H01B013/00（2）
发明人 WON D（2） WON D K（2）
公开年 2012（7）
申请年 2011（3）  2012（3） 
专利权人 HANWHA TECHW.（2） SAMSUNG TECH.（2）

Making thermoacoustic element involves arranging graphene film on metal substrate/forming laminate structure by stacking nonmetal substrate on substrate/removing substrate from laminate structure/forming through-holes in nonmetal substrate.

JIANG K, LIN X, XIAO L, FAN S, IM H Y, FAN F Y

Transfer sheet used for e.g. capacitance-type touch input device, has base sheet, thin metal film layer, and transparent conductive film layer containing graphene as main component, formed sequentially.

MORI F, TERAZONO H, TERAZONO S

Transparent conductive film used as electrode in e.g. heater, has electroconductive graphene sheet with secondary region whose light transmittance capacity is higher than primary region.

SHIMIZU K, KOBAYASHI T, KIMURA N, IZUHA K, DEWA K

Graphene transferring method, involves adhering heat exfoliation sheet with target substrate, and pressurizing heat exfoliation sheet pressurized with graphene according to atmospheric condition.

HONG B H, CHOI J, KIM Y, KIM K S, KANG J, KIM H, CHOI J B

Graphene transferring method involves compressing catalyst metal film and substrate film using initial roller, and separating substrate film from metal film.

NA D, YOON J, SONG Y, WON D, NA D H, YOON J H, SONG Y I, WON D K, YUAN D

Apparatus useful for e.g. producing graphene from graphite, comprises multilayer co-extrusion device comprising many series-coupled layer multiplication dies, and configured to exfoliate graphene by co-extrusion of processing material.

CRUZ C A

Method of manufacturing grapheme used in FET, involves forming graphene on catalyst layer by cooling catalyst layer, and taking out supporting belt, on which catalyst layer is loaded and graphene is formed, from chamber to outside.

CHO S, WON D, CHO S M, WON D K, CHO S H