国家/地区 中国（6） 美国（2）
IPC部 C（7）
IPC大类 C04（7）
IPC小类 C04B（7）
IPC C04B035/10（2） C04B035/622（2） C04B041/87（2）
C23C016/32（2）
发明人
公开年 2021（5） 2022（2）
申请年 2021（7）
专利权人

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Graphene oxide-coated ceramic particle corrosion-resistant gradient coating comprises ceramic particles preparation, dispersing and reacting with metal oxide powder, generating hybridized reactant with ceramic aggregate, mixing adhesive, and curing sintering.

TAI Z

Preparation of graphite thermal field material surface-coated with tantalum carbide coating for high temperature third-generation semiconductor crystal growth furnace, involves high-pressure water treating graphite surface, plasma spraying tantalum powder, infiltrating graphite, and carbonizing.

TANG B, WU X

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Anti-burning material for laser cutting machine comprises high temperature resistant reflective coating formed by high temperature-resistant reflective coating, inorganic silicate solution, and nano titanium dioxide.

XU M, ZHANG W, LU S, WANG Y, YANG X

Preparing hydroxyapatite bioceramic on titanium alloy surface by sol-gel method, comprises placing titanium alloy substrate on spin coater, dropping prepared sol containing phosphorus pentoxide on substrate surface, drying and heating.

ZHU J, HAN F, SHEN Q, ZHU Y, LUO H, GUO B, LIU Y

Composite sintering aid used for e.g. enhancing thermal conductivity of composite sintering aid-containing ceramic insulating layer, has beryllium fluoride and fluorine-containing silane coupling agent modified graphene oxide.

FANG Y, ZHANG X, LEI N, ZHU K