国家/地区 韩国（7）
IPC部 C（7）
IPC大类 C04（7）
IPC小类 C04B（7）
IPC C01B031/04（4） C01B032/182（3） C04B035/52（3）
B82Y030/00（2） B82Y040/00（2） C01B032/194（2）
C04B035/622（2） C04B041/00（2） C04B041/50（2）
C04B041/85（2） C04B041/87（2） C25D015/00（2）
H01L021/02（2）
发明人
公开年 2021（2）
申请年 2020（2） 
专利权人

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Doping method involves stacking sacrificial layer on doped layer, arranging doping material on the sacrificial layer, arranging electrodes on doping material and doped layer, and doping doping material into doped layer.

SON K, KIM T, SON A

Graphene flake thin film producing apparatus for producing graphene on substrate using graphite powder, has graphite supply unit that is connected to internal space of nozzle unit, and provided to supply graphite powder to internal space.

AHN S, CHU W, CHUN D, LEE C S, NASIM M N E A A, AHN S H, CHU W S, CHUN D M, SUNYONG L C

Production of integrated layer of highly oriented halogenated graphene sheets or molecules used as dielectric material component for microelectronic devices involves preparing graphene oxide dispersion or gel having graphene oxide sheets.

ZHAMU A, JANG B Z, ZHAMUARUNA

Forming graphene, useful as e.g. electrical or thermal conductive substrate, comprises placing and heating a substrate within reaction chamber, introducing carbon precursor into chamber, and forming graphene layer on surface of substrate.

LIU X, MANLEY R G, MORENA R M, SONG Z

Method for non-destructively transferring graphene, involves nondestructively combining graphene coated with media with target substrate, and removing media to transfer graphene to target substrate nondestructively.

REN W, GAO L, MA L, CHENG H