国家/地区 美国（7）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B031/02（7）
发明人
公开年 2012（3）
申请年 2013（3）  2011（2） 
专利权人

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Synthesizing graphene nanoribbon used in e.g. field effect transistor or bipolar junction transistor, comprises polycyclization of linearly conjugated aryl compounds to provide graphene nanoribbon precursor.

KLEIN J P

New imidazolidine-type compound used for mixed ionic liquid for preparation of graphene dispersion liquid for electronic component e.g. energy storage electrical appliance and lithium-ion secondary battery.

AIDA TAKUZO, PARK CHIYOUNG, RAVI SAISUWAN, MATSUMOTO MICHIO, AIDA T, PARK C, RAVI S, MATSUMOTO M

Graphene useful in power storage device e.g. display devices having at least one hole inside a ring-like structure formed by carbon and nitrogen or carbon and at least one element selected from Group 16 element and halogen.

HIROHASHI T, OGUNI T, KOKUNI T

Preparing nitrogen doped-graphene involves reacting organic material with amino and functional group e.g. amide group with graphite in reaction medium e.g. polyphosphoric acid and heat treating the prepared organic material-grafted graphene.

JEON I Y, BAEK J H, BAEK J B

Composition useful for fabricating a functionalized carbon-based nanostructure, comprises graphene or graphene oxide comprising at least one functional group associated with the graphene or graphene oxide.

SWAGER T M, COLLINS W R, LEWANDOWSKI W, SCHMOIS E, SYDLIK S, WALISH J, GOODS J B

Modified graphene comprising sp3 orbital, useful in e.g. spintronics device, magneto-electronic device, wafer, ferromagnetic semiconductor, and field effect transistor, and as room temperature ferromagnetic semiconductor.

BEKYAROVA E, HADDON R C, HONG J, ITKIS M E, KHIZROEV S, RAMESH P