国家/地区 美国（8） 世界知识产权组织（7） 韩国（5） 中国（4） 欧洲专利局（EPO）（2） 日本（2）
IPC部 B（8）
IPC大类 B82（8）
IPC小类 B82Y（8）
IPC B82Y030/00（8）
发明人
公开年 2012（3） 2013（3） 2014（2）
申请年 2012（8）
专利权人

Unitary graphene layer or graphene single crystal useful for heat-spreading applications e.g. as a heat spreader or a heat sink product in e.g. hand-held device comprises closely packed and chemically bonded parallel graphene planes.

ZHAMU A, WANG M, XIONG W, JANG B Z

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H

Method for forming composition of matter to control macroscopically continuous single and multiple layer graphene films, involves forming layers of graphene on metal oxide opposite major surface of metal by carbon molecular beam epitaxy.

KELBER J, KELBER J A

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S

Growing patterned single-crystalline graphene comprises depositing a graphene growth barrier that defines a pattern on a substrate surface, and growing graphene on the substrate surface, around the graphene growth barrier.

ARNOLD M S, GOPALAN P, SAFRON N S, KIM M

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y