国家/地区 美国（8）
IPC部 C（8）
IPC大类 C01（8） C30（8） B82（7）
C23（5） H01（5） B32（4）
IPC小类 C01B（8）
IPC C01B031/02（8）
发明人 VEERASAMY V（3） VEERASAMY V S（3）
公开年 2011（8）
申请年 2009（3）  2011（3）  2010（2） 
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3）

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K

Manufacturing graphene sheet used as electrode material, involves growing graphene sheet on graphene growth support by applying carbon sources and heat; and forming ripple on the sheet by cooling the graphene growth support and sheet.

AHN J, HONG B, KIM K, AHN J H, HONG B H, KIM K S

Manufacturing structure comprising semiconductor substrate and modified graphene layer, comprises supplying initial structure comprising standard graphene layer, and hydrogenating initial structure with exposure dosage of hydrogen gas.

CHIANG S, ENRIQUEZ H, OUGHADDOU H, SOUKIASSIAN P, TEJEDA G A, VIZZINI S, TEJEDA GALA A, GALA A T

Making isotopically enriched graphene, comprises e.g. accelerating ion beam with an electric field towards substrate; and using magnetic or electric field generating devices to separate the ion beam into many component ion beams.

BARKER D L, OWENS W R, BECK J W

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Manufacture of graphene thin film used in metal oxides window electrodes for solid-state solar cells involves disposing catalyst thin film on back support substrate, introducing hydrocarbon, and heating to promote graphene growth.

VEERASAMY V S, VEERASAMY V