国家/地区 美国（4） 世界知识产权组织（4） 中国（2） 欧洲专利局（EPO）（2） 日本（2） 韩国（2）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C23C016/34（5）
发明人
公开年
申请年
专利权人

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Formation of graphene-boron nitride interface used in e.g. formation of graphene-boron nitride heterostructure, involves exposing ruthenium substrate to ethylene, and sequentially exposing resultant substrate to oxygen and borazine.

SUTTER P W, SUTTER E A

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X